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Home > chinese-english > "grooved depth" in English

English translation for "grooved depth"

轮槽深度

Related Translations:
endodermal groove:  内胚层沟
window groove:  窗槽口
groove lake:  蚀沟湖
grooved brick:  带槽砖
groove type:  坡口形式
digastric groove:  二腹肌沟
fang groove:  牙沟
epipharyngeal groove:  咽上沟
shaped groove:  曲形槽
wide groove:  宽沟,大沟
Example Sentences:
1.The relationship between diffraction efficiency and groove depth , and the light - guiding properties of sub - micron gratings are verified by experiments
通过实验验证亚微米光栅衍射效率与光栅槽深的关系,并证实亚微米光栅具有导光特性。
2.The transmission angle is controlled by grating frequency and the diffraction efficiency is controlled by groove depth of sub - micro gratings to get uniformity of transmission filed
亚微米光栅型导光板通过光栅空频控制出射光方向、控制槽深调节衍射效率,达到导光板出射光强的均匀性。
3.Both experimental and calculated results on variation of groove depth with impress depth have been compared , resulting in that the two were in accordance with each other hence correct and believable numerical results
最后对槽深与压痕深度的关系问题进行了数值模拟与实验结果对比,二者符合较好,说明数值模拟给出的研究结论是可信的。
4.The results show that : ( a ) the influence of the groove shape on the low cut - off frequency is great at certain groove depth ; the high cut - off frequency is gradually lowered from triangle profile , cosine profile to swallow - tailed profile
结论为: ( 1 )槽深较大情况下,槽形状对截至频率影响较大,槽形状从三角形变化到燕尾形,截至频率依次降低。
5.The results show that : ( a ) the influence of the groove shape on the high cut - off frequency is great at certain groove depth ; the high cut - off frequency is gradually lowered from triangle profile , cosine profile to swallow - tailed profile
结论为:中文摘要( 1 )适当槽深情况下,槽形状对高截止频率影响较大;槽形状从三角形变化到余弦形直到燕尾形,高截止频率依次降低。
6.( c ) for the helical swallow - tailed structures with same groove width , the deep groove depth one which is suitable for the use in a interaction system of high power twts , has the largest coupling impedance and the lowest phase velocity in comparison with the other different groove profiles
( 3 )具有相同槽日宽度的燕尾形螺旋槽结构在槽深度较深情况下用作大功率行波管的互作用系统具有最大的耦合阻抗和最低的相速。
7.Firstly , the diffraction properties of sub - micron gratings is analyzed using rigorous coupled - wave theory , including the relationship of the direction of diffraction light in each grade and grating period , and the relationship between diffraction efficiency and groove depth
文中首先利用严格耦合波理论( rcwa )分析亚微米光栅的衍射特性,即各级次衍射光方向与光栅周期及入射光角度的关系,亚微米光栅的衍射效率与槽深的关系。
8.The arrangement of light guide units is the research emphases . firstly , the dimensions of light guiding unit are calculated by rayleigh criterion . then , the parameters of sub - micron gratings are designed : the grating period is calculated by the grating equation according to the incident and transmitted angles ; finally , the groove depths of the gratings are arranged to satisfy the uniformity request
导光网点的设计是本文研究的重点,首先利用瑞利判据计算出各导光网点的大小,然后设计导光网点? ?亚微米光栅的参数:按照入射光和出射光的角度,根据光栅方程确定光栅周期;最后,按照均匀性要求确定各导光单元的光栅槽深。
9.Based on the hydrodynamic energy transport model , the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied . the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth . research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ) , the threshold voltage increases , the sub - threshold characteristics and the drain current driving capability degrade , and the hot carrier immunity becomes better in deep - sub - micron pmosfet . the short - channel - effect suppression and hot - carrier - effect immunity are better , while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow . so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅pmosfet性能的影响进行了分析,对所得结果从器件内部物理机制上进行了讨论,最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大,槽栅器件的阈值电压升高,亚阈斜率退化,漏极驱动能力减弱,器件短沟道效应的抑制更为有效,抗热载流子性能的提高较大,且器件的漏极驱动能力的退化要比改变结深小.因此,改变槽深加大负结深更有利于器件性能的提高
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